QPD1425

    1.2 - 1.4 GHz, 300 Watt, 65 Volt, GaN on SiC RF Transistor

    Key Features

    • Operating Frequency Range: 1.2 - 1.4 GHz
    • Saturated Output Power PSAT: 55dBm
    • Drain Efficiency at PSAT: 70%
    • Large Signal Gain at PSAT: 17 dB
    • Bias: VDS = +65V, IDQ = 430 mA
    • Package Type: NI-400
    • Package Dimensions: 10.16 x 10.16 x 4.06 mm

    The QPD1425 is a 300W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 55dBm of saturated output power with 17dB of large-signal gain and 70% of drain efficiency.

    Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

    Evaluation boards are available upon request.

     

    Typical Applications

      • L-Band Radar
      • ISM

    Product Categories

    Application Categories

    Frequency Min(MHz) 1.2
    Frequency Max(MHz) 1.4
    Gain(dB) 17
    Psat(dBm) 55
    Drain Efficiency(%) 70
    Vd(V) 65
    Idq(mA) 430
    Package Type NI-400
    Package(mm) 10.16 x 10.16 x 4.06
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No