• Support multiple applications: radar, advanced communications, EW, aerospace
    • Provides increased efficiency with shorter lead times
    • GaN foundry services support high-power applications and complement our high-frequency standard product portfolio
    • In-house highly specialized packaging and integrated assembly facility (AMMA)
    • 20+ years expertise packaging and testing high-frequency components
    • Products are manufactured with same high-precision process controls that ensure NASA-trusted reliability and functionality

    Why Qorvo?

    Fully accredited by the U.S. DMEA as a Category 1A "Trusted Source" since 2008
    • Over 30 years supporting DoD, with experience across defense/aerospace, mobile and infrastructure markets
    • Largest commercial open foundry and solution provider to U.S. DoD
    • Largest portfolio of GaN/GaAs foundry processes
    • The only GaN supplier to achieve Manufacturing Readiness Level 10
    • Industry leading GaN reliability – achieving > 10 Million hours MTTF at 200C, far exceeds industry standard of 1M hours

    Qorvo GaN Innovation

    Qorvo's comprehensive foundry services are complemented by our innovative GaN solutions, including full MMIC amplifiers, die-level FETs, switches, and wideband transistors from DC-35 GHz. Our foundry products are manufactured with the same high-precision process controls that ensure NASA-trusted reliability and functionality.



    AMMA

    Advanced Microwave Module Assembly (AMMA) Qorvo Advanced Microwave Module Assembly (AMMA) Facility
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    GaN Technology at Qorvo

    0.25 um QGaN25:

    • Generation II 0.25-micron GaN on silicon carbide (SiC);
    100mm wafers; DC-18 GHz applications
    • Production Release 2012
    • Operation through 23 GHz
    • ≤40 V Operating Voltage

    0.15 um QGaN15:

    • 0.15-micron GaN on SiC;
    100mm wafers; DC-40 GHz applications with drain bias up to 28 V
    • Production Release 2013
    • Operation through 50 GHz
    • ≤28 V Operating voltage

    0.25 um High Voltage QGaN25HV:

    • High-voltage 0.25-micron GaN on SiC;
    100mm wafers, DC-10
    • Production Released 2013
    • Operation through 10 GHz
    • ≤50 V Operating voltage

    0.50 um QGaN50:

    • 0.50-micron GaN on SiC;
    100mm wafers; DC-10GHz applications
    • Production Released 2015
    • Operation through 10 GHz
    • ≤65 V Operating voltage

    Qorvo brings the most reliable and efficient GaN portfolio to the defense and aerospace customers. With superior power, efficiency and gain, our customers have the flexibility to design systems without losing performance. our innovative GaN product solutions, include full MMIC amplifiers, die-level FETs, switches, and wideband transistors.

    Advanced Microwave Module Assembly Facility (AMMA)

    Qorvo's defense and network communications customers receive comprehensive manufacturing services from our U.S-based Advanced Microwave Module Assembly facility, also known as "AMMA."

    Through our in-house facility, we can prototype devices, test manufacturability and ramp to full production with almost any standard or custom package.

    AMMA provides a "one-stop shop" for Qorvo's design, manufacturing, assembly and packaging. Located just north of Dallas, Texas, this world-class facility provides advanced, integrated assembly and packaging of RF components within communications, radar and electronic warfare (EW) applications.

    Packaging Capabilities

    • Highly specialized packaging and integrated assembly in our secure facility
    • Single and multi-chip assembly
    • Low-cost, high-volume packaging
    • Die on Tab (DoT) / standard packaging options

    DMEA Accreditation of Trust Certificate and Scope

    DMEA Accreditation of Trust Certificate DMEA Scope Certificate